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A 1951 USAF resolution test chart is a microscopic optical resolution test device originally defined by the U.S. Air Force MIL-STD-150A standard of 1951. The design provides numerous small target shapes exhibiting a stepped assortment of precise spatial frequency specimens. It is widely used in optical engineering laboratory work to analyze and ...
Radar beacon (short: racon) is – according to article 1.103 of the International Telecommunication Union's (ITU) ITU Radio Regulations (RR) [1] – defined as "A transmitter-receiver associated with a fixed navigational mark which, when triggered by a radar, automatically returns a distinctive signal which can appear on the display of the ...
Thin-film equation. In fluid mechanics, the thin-film equation is a partial differential equation that approximately predicts the time evolution of the thickness h of a liquid film that lies on a surface. The equation is derived via lubrication theory which is based on the assumption that the length-scales in the surface directions are ...
In physics, optical depth or optical thickness is the natural logarithm of the ratio of incident to transmitted radiant power through a material. Thus, the larger the optical depth, the smaller the amount of transmitted radiant power through the material. Spectral optical depth or spectral optical thickness is the natural logarithm of the ratio ...
Rayon, also called viscose [1] and commercialised in some countries as sabra silk or cactus silk, [2] is a semi-synthetic fiber, [3] made from natural sources of regenerated cellulose, such as wood and related agricultural products. [4] It has the same molecular structure as cellulose.
Thin-film interference. Thin-film interference is a natural phenomenon in which light waves reflected by the upper and lower boundaries of a thin film interfere with one another, increasing reflection at some wavelengths and decreasing it at others. When white light is incident on a thin film, this effect produces colorful reflections.
Thickness of the Ge 40 Se 60 /Si film on the silicon substrate as 34.5 nm, Thickness of the Ge 40 Se 60 /Si film on the oxidized silicon substrate as 33.6 nm, Thickness of SiO 2 (with n and k spectra of SiO 2 held fixed), and; n and k spectra, in 190–1000 nm range, of Ge 40 Se 60 /Si. Example 5: Complex trench structure
A material's half-value layer (HVL), or half-value thickness, is the thickness of the material at which the intensity of radiation entering it is reduced by one half. [1] HVL can also be expressed in terms of air kerma rate (AKR), rather than intensity: the half-value layer is the thickness of specified material that, "attenuates the beam of ...