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DDR2 SDRAM. Double Data Rate 2 Synchronous Dynamic Random-Access Memory ( DDR2 SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) interface. It is a JEDEC standard (JESD79-2); first published in September 2003. [ 2] DDR2 succeeded the original DDR SDRAM specification, and was itself succeeded by DDR3 SDRAM in 2007.
DDR SDRAM. Double Data Rate Synchronous Dynamic Random-Access Memory ( DDR SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM and DDR5 SDRAM.
Memory based on MOS transistors, was developed in the late 1960s and was the basis for all early commercial semiconductor memory. The first commercial DRAM IC chip, the 1K Intel 1103, was introduced in October 1970. Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992.
At Hot Chips 2016, Samsung announced GDDR6 as the successor of GDDR5X. [5] [6] Samsung later announced that the first products would be 16 Gbit/s, 1.35 V chips.[7] [8] In January 2018, Samsung began mass production of 16 Gb (2 GB) GDDR6 chips, fabricated on a 10 nm class process and with a data rate of up to 18 Gbit/s per pin.
v. t. e. Low-Power Double Data Rate ( LPDDR ), also known as LPDDR SDRAM, is a type of synchronous dynamic random-access memory that consumes less power and is targeted for mobile computers and devices such as mobile phones. Older variants are also known as Mobile DDR, and abbreviated as mDDR. Modern LPDDR SDRAM is distinct from DDR SDRAM, with ...
DDR3 SDRAM. Double Data Rate 3 Synchronous Dynamic Random-Access Memory ( DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access ...
Hynix Semiconductor introduced the industry's first 60 nm class "1 Gb" (1024 3 bit) GDDR5 memory in 2007. [3] It supported a bandwidth of 20 GB/s on a 32-bit bus, which enables memory configurations of 1 GB at 160 GB/s with only 8 circuits on a 256-bit bus. The following year, in 2008, Hynix bested this technology with its 50 nm class "1 Gb ...
High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix.It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs [1] and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers ...
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